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600mA Silicon Power Transistor NPN Power Transistor High Current

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    Buy cheap 600mA Silicon Power Transistor NPN Power Transistor High Current from wholesalers
     
    Buy cheap 600mA Silicon Power Transistor NPN Power Transistor High Current from wholesalers
    • Buy cheap 600mA Silicon Power Transistor NPN Power Transistor High Current from wholesalers

    600mA Silicon Power Transistor NPN Power Transistor High Current

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    Brand Name : OTOMO
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : A42
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    600mA Silicon Power Transistor NPN Power Transistor High Current

    SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN)


    FEATURE

    Low Collector-Emitter Saturation Voltage

    High Breakdown Voltage


    Marking :D965A


    MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

    SymbolParameterValueUnit
    VCBOCollector-Base Voltage310V
    VCEOCollector-Emitter Voltage305V
    VEBOEmitter-Base Voltage5V
    ICCollector Current -Continuous200mA
    ICMCollector Current -Pulsed500mA
    PCCollector Power Dissipation500mW
    RθJAThermal Resistance from Junction to Ambient250℃/W
    TJJunction Temperature150
    TstgStorage Temperature-55~+150




    ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC=100µA,IE=0310V
    Collector-emitter breakdown voltageV(BR)CEOIC=1mA,IB=0305V
    Emitter-base breakdown voltageV(BR)EBOIE=100µA,IC=05V

    Collector cut-off current

    ICBOVCB=200V,IE=00.25µA

    ICEX

    VCE=100V,VX=5V5µA
    VCE=300V,VX=5V10µA
    Emitter cut-off currentIEBOVEB=5V,IC=00.1µA

    DC current gain

    hFE(1)VCE=10V, IC=1mA60
    hFE(2)VCE=10V, IC=10mA100300
    hFE(3)VCE=10V, IC=30mA75
    Collector-emitter saturation voltageVCE(sat)IC=20mA,IB=2mA0.2V
    Base-emitter saturation voltageVBE(sat)IC=20mA,IB=2mA0.9V
    Transition frequencyfTVCE=20V,IC=10mA, f=30MHz50MHz


    Typical Characteristics



    Package Outline Dimensions

    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A1.4001.6000.0550.063
    b0.3200.5200.0130.020
    b10.4000.5800.0160.023
    c0.3500.4400.0140.017
    D4.4004.6000.1730.181
    D11.550 REF.0.061 REF.
    E2.3002.6000.0910.102
    E13.9404.2500.1550.167
    e1.500 TYP.0.060 TYP.
    e13.000 TYP.0.118 TYP.
    L0.9001.2000.0350.047





    SOT-89-3L Suggested Pad Layout





    SOT-89-3L Tape and Reel





    Quality 600mA Silicon Power Transistor NPN Power Transistor High Current for sale
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