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MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

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TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN)

FEATURE

Ÿ Power Switching Applications

MARKING

MJE13003=Device code

Solid dot = Green molding compound device, if none, the normal device

ORDERING INFORMATION

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector -Base Voltage	600	V
VCEO	Collector-Emitter Voltage	420	V
VEBO	Emitter-Base Voltage	7	V
I_C	Collector Current -Continuous	0.2	A
P_C	Collector Power Dissipation	0.75	W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55 ~150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C= 0.1mA,I_E=0	600			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C= 1mA,I_B=0	400			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=0.1mA,I_C=0	6			V
Collector cut-off current	ICBO	V_CB=600V,I_E=0			100	uA
Collector cut-off current	ICEO	V_CE=400V,I_B=0			100	uA
Emitter cut-off current	IEBO	V_EB=7V,I_C=0			10	uA
DC current gain	hFE(1)*	V_CE=10V, I_C=200mA	20		30
DC current gain	hFE(2)	V_CE=10V, I_C=250μA	5
Collector-emitter saturation voltage	VCE(sat)1	I_C=200mA,I_B=40mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	I_C=200mA,I_B=40mA			1.1	V
Transition frequency	f_T	V_CE=10V, I_C=100mA,f=1MHz	5			MHz
Fall time	t_f	I_C=100mA			0.5	μs
Storage time	tS*	I_C=100mA	2		4	μs

TO-92 Package Outline Dimensions

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tip series transistors

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