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MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

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    Buy cheap MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type from wholesalers
     
    Buy cheap MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type from wholesalers
    • Buy cheap MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type from wholesalers
    • Buy cheap MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type from wholesalers

    MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

    Ask Lasest Price
    Brand Name : OTOMO
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : MJE13003
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    MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type

    TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN)


    FEATURE

    Ÿ Power Switching Applications


    MARKING

    MJE13003=Device code

    Solid dot = Green molding compound device, if none, the normal device



    ORDERING INFORMATION

    Part NumberPackagePacking MethodPack Quantity
    MJE13003TO-126Bulk200pcs/Bag
    MJE13003-TUTO-126Tube60pcs/Tube



    MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)


    SymbolParameterValueUnit
    VCBOCollector -Base Voltage600V
    VCEOCollector-Emitter Voltage420V
    VEBOEmitter-Base Voltage7V
    ICCollector Current -Continuous0.2A
    PCCollector Power Dissipation0.75W
    TJJunction Temperature150
    TstgStorage Temperature-55 ~150


    ELECTRICAL CHARACTERISTICS

    Ta=25 Š unless otherwise specified


    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC= 0.1mA,IE=0600V
    Collector-emitter breakdown voltageV(BR)CEOIC= 1mA,IB=0400V
    Emitter-base breakdown voltageV(BR)EBOIE=0.1mA,IC=06V
    Collector cut-off currentICBOVCB=600V,IE=0100uA
    Collector cut-off currentICEOVCE=400V,IB=0100uA
    Emitter cut-off currentIEBOVEB=7V,IC=010uA
    DC current gainhFE(1)*VCE=10V, IC=200mA2030
    hFE(2)VCE=10V, IC=250μA5
    Collector-emitter saturation voltageVCE(sat)1IC=200mA,IB=40mA0.5V
    Base-emitter saturation voltageVBE(sat)IC=200mA,IB=40mA1.1V
    Transition frequencyfTVCE=10V, IC=100mA,f=1MHz5MHz
    Fall timetfIC=100mA0.5μs
    Storage timetS*IC=100mA24


    TO-92 Package Outline Dimensions


    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A2.5002.9000.0980.114
    A11.1001.5000.0430.059
    b0.6600.8600.0260.034
    b11.1701.3700.0460.054
    c0.4500.6000.0180.024
    D7.4007.8000.2910.307
    E10.60011.0000.4170.433
    e2.290 TYP0.090 TYP
    e14.4804.6800.1760.184
    h0.0000.3000.0000.012
    L15.30015.7000.6020.618
    L12.1002.3000.0830.091
    P3.9004.1000.1540.161
    Φ3.0003.2000.1180.126



    Quality MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type for sale
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