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3DD13005 Tip Power Transistors Switch Emitter Base Voltage 9V High Efficiency

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TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN)

FEATURE

Power Switching Applications

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	700	V
VCEO	Collector-Emitter Voltage	400	V
VEBO	Emitter-Base Voltage	9	V
I_C	Collector Current -Continuous	1.5	A
PC	Collector Dissipation	1.25	W
TJ, Tstg	Junction and Storage Temperature	-55~+150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	Ic= 1mA,IE=0	700			V
Collector-emitter breakdown voltage	V(BR)CEO	Ic= 10 mA,IB=0	400			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 1mA, I_C=0	9			V
Collector cut-off current	ICBO	V_CB= 700V,I_E=0			1	mA
Collector cut-off current	ICEO	V_CE= 400V,I_B=0			0.5	mA
Emitter cut-off current	IEBO	V_EB= 9 V, I_C=0			1	mA
DC current gain	hFE(1)	V_CE= 5 V, I_C= 0.5 A	8		40
	hFE(2)	V_CE= 5 V, I_C= 1.5A	5
Collector-emitter saturation voltage	VCE(sat)	IC=1A,IB= 250 mA			0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=1A, IB= 250mA			1.2	V
Base-emitter voltage	VBE	IE= 2A			3	V
Transition frequency	fT	V_CE=10V,Ic=100mA f =1MHz	5			MHz
Fall time	tf	I_C=1A,I_B1=-I_B2=0.2A VCC=100V			0.5	µs
Storage time	t_s	IC=250mA	2		4	µs

CLASSIFICATION OF hFE1

Rank
Range	8-10	10-15	15-20	20-25	25-30	30-35	35-40

CLASSIFICATION OF tS

TO-92 Package Outline Dimensions

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3DD13005 Tip Power Transistors

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