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High Current Mosfet Power Transistor Dual N Type High Performance

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HXY4812 0V Dual N-Channel MOSFET

General Description

The HXY4812 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

Product Summary

Absolute Maximum Ratings T =25°C unless otherwise noted

Electrical Characteristics (T =25°C unless otherwise noted)

A. The value of R_θ_JA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P_D is based on T_J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

D. The R_θ_JA is the sum of the thermal impedence from junction to lead R_θ_JL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

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