6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection
General Description:
The AP9926A uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 20V ID = 6A
RDS(ON) < 25mΩ @ VGS=4.5V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| AP9926A | SOP-8 | AP9926A XXX YYYY | 3000 |
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
| Symbol | Parameter | Rating | Units |
| V DS | Drain-Source Voltage | 20 | V |
| V GS | Gate-Source Voltage | +12 | V |
| ID@TA=25 ℃ | Drain Current, V GS @ 4.5V 3 | 6 | A |
| ID@TA=70 ℃ | Drain Current, V GS @ 4.5V 3 | 4.8 | A |
| IDM | Pulsed Drain Current1 | 26 | A |
| P D@TA=25℃ | Total Power Dissipation | 2 | W |
| Linear Derating Factor | 0.016 | W/ ℃ |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Rthj-a | Maximum Thermal Resistance, Junction- ambient | 62.5 | ℃/W |
Electrical Characteristics@Tj =25 C(unless otherwise specified)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
| BV DSS | Drain-Source Breakdown Voltage | VGS=0V, I D=250uA | 20 | - | - | V |
| RDS(ON) | Static Drain-Source On- Resistance | VGS=4.5V, I D=6A | - | 21 | 25 | mΩ |
| VGS=2.5V, I D=4A | - | 32 | 45 | mΩ |
| V GS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | - | - | 1.2 | V |
| g fs | Forward Transconductance | VDS=10V, I D=6A | - | 6 | - | S |
| IDSS | Drain-Source Leakage Current | VDS=20V, V GS =0V | - | - | 25 | uA |
Drain-Source Leakage Current (Tj=70 C) | VDS=20V ,V GS=0V | - | - | 250 | uA |
| IGSS | Gate-Source Leakage | VGS=+12V, V DS=0V | - | - | +100 | nA |
| Qg | Total Gate Charge | ID=6A | - | 11 | 17.6 | nC |
| Qgs | Gate-Source Charge | - | 1.1 | - | nC |
| Qgd | Gate-Drain ("Miller") Charge | - | 4.1 | - | nC |
| td(on) | Turn-on Delay Time | VDS=10V | - | 4.2 | - | ns |
| tr | Rise Time | - | 9 | - | ns |
| td(off) | Turn-off Delay Time | - | 23 | - | ns |
f t | Fall Time | - | 3.5 | - | ns |
| Ciss | Input Capacitance | | - | 570 | 910 | pF |
| Coss | Output Capacitance | - | 90 | - | pF |
| Crss | Reverse Transfer Capacitance | - | 85 | - | pF |
| Rg | Gate Resistance | f=1.0MHz | - | 1.6 | 2.4 | Ω |
| V SD | Forward On Voltage | IS=1.7A, V GS=0V | - | - | 1.2 | V |
| trr | Reverse Recovery Time | IS=6A, V GS=0V, dI/dt=100A/µs | - | 21 | - | ns |
| Qrr | Reverse Recovery Charge | - | 14 | - | nC |
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
| BV DSS | Drain-Source Breakdown Voltage | VGS=0V, I D=250uA | 20 | - | - | V |
| RDS(ON) | Static Drain-Source On- Resistance | VGS=4.5V, I D=6A | - | 21 | 25 | mΩ |
| VGS=2.5V, I D=4A | - | 32 | 45 | mΩ |
| V GS(th) | Gate Threshold Voltage | VDS=VGS, ID=250uA | - | - | 1.2 | V |
| g fs | Forward Transconductance | VDS=10V, I D=6A | - | 6 | - | S |
| IDSS | Drain-Source Leakage Current | VDS=20V, V GS =0V | - | - | 25 | uA |
Drain-Source Leakage Current (Tj=70 C) | VDS=20V ,V GS=0V | - | - | 250 | uA |
| IGSS | Gate-Source Leakage | VGS=+12V, V DS=0V | - | - | +100 | nA |
| Qg | Total Gate Charge | ID=6A | - | 11 | 17.6 | nC |
| Qgs | Gate-Source Charge | - | 1.1 | - | nC |
| Qgd | Gate-Drain ("Miller") Charge | - | 4.1 | - | nC |
| td(on) | Turn-on Delay Time | VDS=10V | - | 4.2 | - | ns |
| tr | Rise Time | - | 9 | - | ns |
| td(off) | Turn-off Delay Time | - | 23 | - | ns |
f t | Fall Time | - | 3.5 | - | ns |
| Ciss | Input Capacitance | | - | 570 | 910 | pF |
| Coss | Output Capacitance | - | 90 | - | pF |
| Crss | Reverse Transfer Capacitance | - | 85 | - | pF |
| Rg | Gate Resistance | f=1.0MHz | - | 1.6 | 2.4 | Ω |
| V SD | Forward On Voltage | IS=1.7A, V GS=0V | - | - | 1.2 | V |
| trr | Reverse Recovery Time | IS=6A, V GS=0V, dI/dt=100A/µs | - | 21 | - | ns |
| Qrr | Reverse Recovery Charge | - | 14 | - | nC |
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